Strain-driven InAs island growth on top of GaAs(111) nanopillars
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.4.014602
Abstract: We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results… read more here.
Keywords: growth; gaas 111; 111 nanopillars; strain driven ... See more keywords