Crack-free ScxAl1−xN(0001̄) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
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DOI: 10.1063/5.0250408
Abstract: We investigate the synthesis of 340-nm-thick ScxAl1−xN layers with 0 ≤ x ≤ 0.35 on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN nucleation layer under conditions giving rise to single-domain N-polar… read more here.
Keywords: assisted molecular; layers grown; 111 plasma; plasma assisted ... See more keywords