Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography
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DOI: 10.1016/j.jcrysgro.2016.11.094
Abstract: Abstract Stacking faults (SFs) in a (111) single crystal diamond grown on a (111) seed crystal were investigated by taking synchrotron X-ray topography images with various diffraction vector g conditions. We found that the SFs… read more here.
Keywords: topography; seed; partial dislocations; 111 single ... See more keywords