High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition
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DOI: 10.1111/jace.15260
Abstract: 3C-SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C-SiC (111) polycrystalline films were prepared… read more here.
Keywords: laser chemical; sic 111; thick films; deposition ... See more keywords