Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
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DOI: 10.1134/s1063782617090202
Abstract: Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 1014 cm–2 and annealed at a… read more here.
Keywords: measurement temperature; temperature; luminescence properties; influence measurement ... See more keywords