Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method
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DOI: 10.1088/1361-6641/ab08bf
Abstract: A two-step approach has been developed for the growth of semi-polar (11–22) GaN on patterned (113) silicon substrates, which effectively eliminates Ga melt-back etching at a high temperature, one of the most challenging issues. A… read more here.
Keywords: polar gan; two step; semi polar; 113 silicon ... See more keywords