Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2021.3074699
Abstract: Conventional hardened cells are not robust enough to single event upset (SEU) in 28nm technology due to the scaling of the transistors. High soft error rate is caused by particle striking at cells and logic… read more here.
Keywords: 12t sram; radiation hardened; crossbar based; based peripheral ... See more keywords