A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Journal of Solid-State Circuits"
DOI: 10.1109/jssc.2022.3192043
Abstract: This article presents a broadband sub-terahertz (THz) power amplifier (PA) with a low-loss four-way power combiner. The proposed power combiner consists of an improved zero-degree combiner (ZDC) and a three-conductor Marchand balun simultaneously achieving broadband… read more here.
Keywords: 130 sige; dual tank; gain; power ... See more keywords
A 250-310 GHz Power Amplifier with 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Terahertz Science and Technology"
DOI: 10.1109/tthz.2021.3099057
Abstract: This paper presents a broadband THz power amplifier (PA) operating close to the maximum oscillation frequency (fmax) with proposed power combining and stagger-tuned gain boosting techniques. A compact broadband power combiner based on the compensated… read more here.
Keywords: gain; power; power amplifier; process ... See more keywords
A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers
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DOI: 10.3390/mi14061184
Abstract: This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth… read more here.
Keywords: 130 sige; compact vector; sige bicmos; bicmos technology ... See more keywords