Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps
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DOI: 10.1007/s00542-019-04322-5
Abstract: An analytical approach incorporating traps (donor type) in the AlGaN layer at the top and bottom heterointerface is proposed to determine threshold voltage (Vth), net sheet carrier concentration (ns) and drain current in Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double-heterostructure… read more here.
Keywords: heterostructure; hemt; al0 15ga0; 15ga0 85n ... See more keywords