5.6 Mb/mm $^{2}$ 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology
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DOI: 10.1109/isscc.2016.7418030
Abstract: Multiported high-performance on-die memories occupy significantly more die area than a comparable single-port memory. Among various multiport memory topologies, the 1-read (R), 1-write (W) 8-transistor (T) Static Random Access Memory (SRAM) with a decoupled read… read more here.
Keywords: sense amplifier; 1r1w sram; finfet cmos; small signal ... See more keywords