Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
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DOI: 10.1109/ted.2018.2878457
Abstract: A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage current versus bias is found to sequentially comprise three ranges of low-field… read more here.
Keywords: 200 gan; leakage; gan soi; vertical leakage ... See more keywords