Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz
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DOI: 10.1109/tmtt.2019.2926289
Abstract: This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and Schottky… read more here.
Keywords: 260 ghz; development; noise source; technology ... See more keywords