Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
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DOI: 10.1016/j.sse.2017.02.011
Abstract: Abstract In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be… read more here.
Keywords: 2deg concentration; gan hemts; algan gan; gate leakage ... See more keywords