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Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100207
Abstract: The preparation of ternary 2D layered material (2DLM) FePSe3 and field‐effect transistor (FET) type photodetector are investigated. By advancing an optimized chemical vapor transport method, bulk crystal FePSe3 is synthesized within several growth hours instead…
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Keywords:
2dlm fepse3;
photodetector;
layered material;
near infrared ... See more keywords