Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c17934
Abstract: Alloying Al2O3 with Ga2O3 to form β-(AlxGa1-x)2O3 opens the door to a large number of new possibilities for the fabrication of devices with tunable properties in many high-performance applications such as optoelectronics, sensing systems, and… read more here.
Keywords: coordination interstitial; al0 2ga0; stability al0; interstitial stability ... See more keywords
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4993569
Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon… read more here.
Keywords: modulation; al0 2ga0; 2ga0 2o3; 2o3 ga2o3 ... See more keywords