Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400780
Abstract: A steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) monolithically integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) device is presented, which allows switching below the Boltzmann limit of 60 mV dec−1 at room temperature (25 °C).… read more here.
Keywords: 2o2 atomic; slope igzo; monolithically integrated; 8zr0 2o2 ... See more keywords