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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5021296
Abstract: In this study, e-(AlxGa1−x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the e-(AlxGa1−x)2O3…
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Keywords:
alxga1 2o3;
plane aln;
2o3 alloy;
aln templates ... See more keywords