Band alignments of SiO2 and HfO2 dielectrics with (AlxGa1-x)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphire
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DOI: 10.1016/j.jallcom.2018.02.177
Abstract: Abstract We report the band alignment of SiO2 and HfO2 with (AlxGa1-x)2O3 (0 ≤ x ≤ 0.53) film utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. (AlxGa1-x)2O3 film were epitaxially grown on sapphire with Ga2O3 buffer layer. The… read more here.
Keywords: alxga1 2o3; band; band alignment; 2o3 film ... See more keywords