Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4993569
Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon… read more here.
Keywords: modulation; al0 2ga0; 2ga0 2o3; 2o3 ga2o3 ... See more keywords
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5037095
Abstract: In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and… read more here.
Keywords: 2o3 ga2o3; alxga1 2o3; double heterostructure; heterostructure field ... See more keywords
Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5108757
Abstract: Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least… read more here.
Keywords: al0 1ga0; ga2o3; 2o3 ga2o3; thermal conductivity ... See more keywords