Articles with "2o3 ga2o3" as a keyword



Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

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Published in 2017 at "Applied Physics Letters"

DOI: 10.1063/1.4993569

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon… read more here.

Keywords: modulation; al0 2ga0; 2ga0 2o3; 2o3 ga2o3 ... See more keywords

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

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Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5037095

Abstract: In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and… read more here.

Keywords: 2o3 ga2o3; alxga1 2o3; double heterostructure; heterostructure field ... See more keywords

Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices

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Published in 2019 at "Applied Physics Letters"

DOI: 10.1063/1.5108757

Abstract: Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least… read more here.

Keywords: al0 1ga0; ga2o3; 2o3 ga2o3; thermal conductivity ... See more keywords

Investigation of interface traps in β-(AlGa)2O3/Ga2O3 heterostructures by dynamic capacitance dispersion technique

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Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0208449

Abstract: In this work, interface traps in β-(AlGa)2O3/Ga2O3 modulation-doped field effect transistor (MODFET) were investigated qualitatively and quantitatively by means of dynamic capacitance dispersion technique. The fabricated β-(AlGa)2O3/Ga2O3 MODFET showed drain current modulation demonstrating the transistor… read more here.

Keywords: 2o3 ga2o3; dispersion; capacitance; interface ... See more keywords

The impact of many-body effects on the properties of β-(AlGa)2O3/Ga2O3 quantum cascade structure

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Published in 2025 at "Journal of Applied Physics"

DOI: 10.1063/5.0254625

Abstract: The impacts of many-body effects, which include the Hartree potential, exchange-correlation potential, depolarization effect, and excitonic effect, on the n-type periodic β-(Al0.3Ga0.7)2O3/Ga2O3 quantum cascade structure with four quantum wells of different widths have been theoretically… read more here.

Keywords: many body; 2o3 ga2o3; body effects; quantum cascade ... See more keywords

Lattice parameters and elastic properties for strain analysis in κ-(InxGa1−x)2O3/κ-Ga2O3/Al2O3 heterostructures from density functional theory, x-ray diffraction, and scanning precession nanobeam electron diffraction

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Published in 2025 at "Journal of Applied Physics"

DOI: 10.1063/5.0293610

Abstract: In this publication, we study strain in κ-(InxGa1−x)2O3/κ-Ga2O3/Al2O3 heterostructures grown by plasma-assisted molecular beam epitaxy using a combination of density functional theory (DFT), x-ray diffraction (XRD), nanobeam electron diffraction (NBED), and energy-dispersive x-ray spectroscopy (EDX)… read more here.

Keywords: lattice parameters; inxga1 2o3; diffraction; 2o3 ga2o3 ... See more keywords

High performance vacuum annealed β-(AlxGa1−x)2O3/Ga2O3 HFET with fT/fMAX of 32/65 GHz

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Published in 2025 at "Applied Physics Express"

DOI: 10.35848/1882-0786/adeb43

Abstract: This letter reports high performance β - (AlxGa1−x)2O3/Ga2O3 Heterostructure FET (HFET) with an improved regrowth process and successful Al2O3 passivation. Highly scaled I shaped gates (100–200 nm LG) have been fabricated with degenerately doped (N++)… read more here.

Keywords: ghz; fmax ghz; high performance; 2o3 ga2o3 ... See more keywords