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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4993569
Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon…
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Keywords:
modulation;
al0 2ga0;
2ga0 2o3;
2o3 ga2o3 ... See more keywords
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1
Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5037095
Abstract: In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and…
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Keywords:
2o3 ga2o3;
alxga1 2o3;
double heterostructure;
heterostructure field ... See more keywords
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1
Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5108757
Abstract: Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least…
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Keywords:
al0 1ga0;
ga2o3;
2o3 ga2o3;
thermal conductivity ... See more keywords
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0
Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0208449
Abstract: In this work, interface traps in β-(AlGa)2O3/Ga2O3 modulation-doped field effect transistor (MODFET) were investigated qualitatively and quantitatively by means of dynamic capacitance dispersion technique. The fabricated β-(AlGa)2O3/Ga2O3 MODFET showed drain current modulation demonstrating the transistor…
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Keywords:
2o3 ga2o3;
dispersion;
capacitance;
interface ... See more keywords
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0
Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0254625
Abstract: The impacts of many-body effects, which include the Hartree potential, exchange-correlation potential, depolarization effect, and excitonic effect, on the n-type periodic β-(Al0.3Ga0.7)2O3/Ga2O3 quantum cascade structure with four quantum wells of different widths have been theoretically…
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Keywords:
many body;
2o3 ga2o3;
body effects;
quantum cascade ... See more keywords
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0
Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0293610
Abstract: In this publication, we study strain in κ-(InxGa1−x)2O3/κ-Ga2O3/Al2O3 heterostructures grown by plasma-assisted molecular beam epitaxy using a combination of density functional theory (DFT), x-ray diffraction (XRD), nanobeam electron diffraction (NBED), and energy-dispersive x-ray spectroscopy (EDX)…
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Keywords:
lattice parameters;
inxga1 2o3;
diffraction;
2o3 ga2o3 ... See more keywords
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Published in 2025 at "Applied Physics Express"
DOI: 10.35848/1882-0786/adeb43
Abstract: This letter reports high performance β - (AlxGa1−x)2O3/Ga2O3 Heterostructure FET (HFET) with an improved regrowth process and successful Al2O3 passivation. Highly scaled I shaped gates (100–200 nm LG) have been fabricated with degenerately doped (N++)…
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Keywords:
ghz;
fmax ghz;
high performance;
2o3 ga2o3 ... See more keywords