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Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2709545
Abstract: This letter presents the impact of source/drain series resistance on the matching of bulk nMOS and pMOS field-effect transistor current over the 5–300K temperature range. A new method to extract series resistance is introduced, and…
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Keywords:
series;
temperature range;
300k temperature;
series resistance ... See more keywords