Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.05.014
Abstract: Abstract High quality In0.30Ga0.70As layers on GaAs substrates were obtained using compositional undulating step-graded Ga1-xInxP (x = 0.48–0.78) buffers grown by metal-organic chemical vapor deposition. The density of threading dislocation is about 4.0 × 106 cm−2 and the root-mean-square roughness… read more here.
Keywords: 30ga0 70as; quality in0; step; in0 30ga0 ... See more keywords
Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.10.005
Abstract: Abstract GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dot (QD) arrays covered by the different capping layers: Al0.30Ga0.70As or Al0.1Ga0.75In0.15As, have been investigated by means of the photoluminescence (PL) and high resolution X-ray diffraction (HR-XRD)… read more here.
Keywords: 30ga0 70as; al0 1ga0; al0 30ga0; xrd ... See more keywords