Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation
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DOI: 10.1063/1.5011224
Abstract: The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines… read more here.
Keywords: irradiation; vacancy; 400 group; group ... See more keywords