Study on the electronic and optical properties of zinc interstitial doped In 0.53 Ga 0.47 As (100) β 2 (2 × 4) photocathode
Sign Up to like & getrecommendations! Published in 2018 at "Optik"
DOI: 10.1016/j.ijleo.2017.12.020
Abstract: Abstract Zn-doped In0.53Ga0.47As (100) β2 (2 × 4) photocathode surface is an important process for forming the performance of the negative electron affinity (NEA) photocathode. In this paper, the first-principles calculation is used based on the density… read more here.
Keywords: in0 53ga0; photocathode; zinc interstitial; 100 photocathode ... See more keywords