GaAs0.5Sb0.5/ In0.53Ga0.47As heterojunction dopingless charge plasma-based tunnel FET for analog/digital performance improvement
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DOI: 10.1016/j.spmi.2020.106522
Abstract: Abstract A dual side doping-less (DL) GaAs0.5Sb0ยท5/In0.53Ga0.47As heterojunction tunnel FET (DDL-HTFET) configuration together with hetero-gate-dielectric material (HfO2/SiO2) has been proposed in this article. Hence, N+-pocket with varying electron concentration has been implemented by changing the… read more here.
Keywords: in0 53ga0; 53ga0 47as; gaas0 5sb0; 5sb0 in0 ... See more keywords