Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
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DOI: 10.3390/mi14010056
Abstract: In this work, we successfully demonstrated In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such… read more here.
Keywords: 53ga0 47as; gaas substrate; inas in0; in0 53ga0 ... See more keywords