Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits
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DOI: 10.1080/00207217.2019.1600738
Abstract: ABSTRACT CMOS (Complementary Metal-oxide-semiconductor) based high-speed applications in the sub-14 nm technology node using InGaAs Fin field-effect-transistors (FinFETs) confront with inevitable effect in form of interface traps upon integration of dielectric layer with InGaAs material.… read more here.
Keywords: in0 52al0; 52al0 48as; layer; cap layer ... See more keywords