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Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.05.004
Abstract: Abstract In this paper indium gallium nitride (InGaN) is used to design and optimize a dual junction (DJ) solar cell, which is series-connected via a tunnel diode, with a careful analysis of the current matching…
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Keywords:
in0 48ga0;
48ga0 52n;
current matching;
dual junction ... See more keywords