R DS(on) vs. inductance: comparison of SiC MOSFETs in 7pin D2Pak and 4pin TO‐247 and their benefits for high‐power MHz inverters
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DOI: 10.1049/iet-pel.2018.5838
Abstract: In this work, the authors present their investigations of the benefits of combining the latest silicon carbide MOSFETs with novel packages for electronic ballasts of inductively coupled plasmas. Such plasmas require MHz inverters with output… read more here.
Keywords: 4pin 247; sic mosfets; power; 7pin d2pak ... See more keywords