Carrier recombination dynamics in Ga0.51In0.49P double-heterostructures up to 500 K
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DOI: 10.1088/1361-6641/ab708e
Abstract: The bulk minority carrier lifetime and interface recombination velocity in GaInP double-heterostructures (DHs) lattice matched to GaAs are extracted using time-resolved photoluminescence (PL) measured between 300 and 500K. Effective lifetimes show a strong dependence on… read more here.
Keywords: recombination velocity; carrier; 51in0 49p; recombination ... See more keywords