Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers
Sign Up to like & getrecommendations! Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0147281
Abstract: We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system lattice matched to InP, as future sources for single and entangled photons for long-haul fiber-based quantum communication in the optical C-band. We achieved these… read more here.
Keywords: 52al0 48as; quantum dots; in0 53ga0; emission ... See more keywords
Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Electronics"
DOI: 10.1080/00207217.2019.1600738
Abstract: ABSTRACT CMOS (Complementary Metal-oxide-semiconductor) based high-speed applications in the sub-14 nm technology node using InGaAs Fin field-effect-transistors (FinFETs) confront with inevitable effect in form of interface traps upon integration of dielectric layer with InGaAs material.… read more here.
Keywords: in0 52al0; 52al0 48as; layer; cap layer ... See more keywords