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Published in 2019 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ab3eca
Abstract: The relationship between the Threading Dislocation Density (TDD), the generation (τg) and recombination lifetime (τr) in relaxed n-type In.53Ga.47As is investigated for a series of p+n junction diodes, containing an TDD ranging from 105 to…
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Keywords:
generation recombination;
recombination lifetime;
53ga 47as;
lifetime ... See more keywords