The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ab3eca
Abstract: The relationship between the Threading Dislocation Density (TDD), the generation (τg) and recombination lifetime (τr) in relaxed n-type In.53Ga.47As is investigated for a series of p+n junction diodes, containing an TDD ranging from 105 to… read more here.
Keywords: generation recombination; recombination lifetime; 53ga 47as; lifetime ... See more keywords