Study on the electronic and optical properties of zinc interstitial doped In 0.53 Ga 0.47 As (100) β 2 (2 × 4) photocathode
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DOI: 10.1016/j.ijleo.2017.12.020
Abstract: Abstract Zn-doped In0.53Ga0.47As (100) β2 (2 × 4) photocathode surface is an important process for forming the performance of the negative electron affinity (NEA) photocathode. In this paper, the first-principles calculation is used based on the density… read more here.
Keywords: in0 53ga0; photocathode; zinc interstitial; 100 photocathode ... See more keywords
Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells
Sign Up to like & getrecommendations! Published in 2021 at "Physica E: Low-dimensional Systems and Nanostructures"
DOI: 10.1016/j.physe.2021.114700
Abstract: Abstract Polarization-resolved photoluminescence was used to study spin relaxation of photoexcited holes in In 0.53Ga0.47As/InP quantum wells in a quantizing magnetic field as a function of temperature. At a temperature below 10 K, the circular polarization… read more here.
Keywords: spin relaxation; relaxation; quantum wells; inp quantum ... See more keywords
GaAs0.5Sb0.5/ In0.53Ga0.47As heterojunction dopingless charge plasma-based tunnel FET for analog/digital performance improvement
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DOI: 10.1016/j.spmi.2020.106522
Abstract: Abstract A dual side doping-less (DL) GaAs0.5Sb0·5/In0.53Ga0.47As heterojunction tunnel FET (DDL-HTFET) configuration together with hetero-gate-dielectric material (HfO2/SiO2) has been proposed in this article. Hence, N+-pocket with varying electron concentration has been implemented by changing the… read more here.
Keywords: in0 53ga0; 53ga0 47as; gaas0 5sb0; 5sb0 in0 ... See more keywords
Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm
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DOI: 10.1038/s41598-021-86175-5
Abstract: The optimization of thermophotovoltaic (TPV) cell efficiency is essential since it leads to a significant increase in the output power. Typically, the optimization of In0.53Ga0.47As TPV cell has been limited to single variable such as… read more here.
Keywords: in0 53ga0; tpv cell; optimization; 53ga0 47as ... See more keywords
Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5030178
Abstract: Over the past few decades, significant progress has been made to manipulate thermal transport in solids. Most of the effort has focused on reducing the phonon mean free path through boundary scattering. Herein, we demonstrate… read more here.
Keywords: in0 53ga0; 47as nanofilms; thick in0; 53ga0 47as ... See more keywords
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
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DOI: 10.1063/1.5046827
Abstract: In0.53Ga0.47As p + n diodes with different densities of extended defects have been analyzed by detailed structural and electrical characterization. The defects have been introduced during Metal-Organic Vapor Phase Epitaxy (MOVPE) growth by using a lattice-mismatched layer… read more here.
Keywords: localized states; in0 53ga0; bandlike localized; extended defects ... See more keywords
Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment
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DOI: 10.1063/5.0037378
Abstract: In this work, we demonstrated considerable enhancement of the transport characteristics of n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with the assistance of in situ NH3/N2 remote-plasma (RP) treatment. According to the measurement and simulation results,… read more here.
Keywords: in0 53ga0; transport characteristics; treatment; plasma treatment ... See more keywords
Enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbers.
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DOI: 10.1364/oe.27.015495
Abstract: We demonstrate a top-illuminated high-speed uni-traveling carrier photodiode (UTC-PD) with a novel design in the p-type absorber, which can effectively shorten the photon absorption depth at telecommunication wavelengths (1.31~1.55 μm) and further enhance the bandwidth-efficiency… read more here.
Keywords: speed; 5sb0 in0; in0 53ga0; gaas0 5sb0 ... See more keywords
Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi14010056
Abstract: In this work, we successfully demonstrated In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such… read more here.
Keywords: 53ga0 47as; gaas substrate; inas in0; in0 53ga0 ... See more keywords