Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202400367
Abstract: Since the first report of ferroelectric HfO2 in 2011, researchers are making rapid progress in the understanding of both material properties and applications. Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage… read more here.
Keywords: films memories; preparation; 5o2 ferroelectric; ferroelectric films ... See more keywords