GaAs0.5Sb0.5/ In0.53Ga0.47As heterojunction dopingless charge plasma-based tunnel FET for analog/digital performance improvement
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106522
Abstract: Abstract A dual side doping-less (DL) GaAs0.5Sb0·5/In0.53Ga0.47As heterojunction tunnel FET (DDL-HTFET) configuration together with hetero-gate-dielectric material (HfO2/SiO2) has been proposed in this article. Hence, N+-pocket with varying electron concentration has been implemented by changing the… read more here.
Keywords: in0 53ga0; 53ga0 47as; gaas0 5sb0; 5sb0 in0 ... See more keywords
Enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbers.
Sign Up to like & getrecommendations! Published in 2019 at "Optics express"
DOI: 10.1364/oe.27.015495
Abstract: We demonstrate a top-illuminated high-speed uni-traveling carrier photodiode (UTC-PD) with a novel design in the p-type absorber, which can effectively shorten the photon absorption depth at telecommunication wavelengths (1.31~1.55 μm) and further enhance the bandwidth-efficiency… read more here.
Keywords: speed; 5sb0 in0; in0 53ga0; gaas0 5sb0 ... See more keywords