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Published in 2023 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202202496
Abstract: Valence change memories are novel data storage devices in which the resistance is determined by a reversible redox reaction triggered by voltage. The oxygen content and mobility within the active materials of these devices play…
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Keywords:
multilevel states;
5sr0 5mno3;
memristive devices;
la0 5sr0 ... See more keywords
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1
Published in 2017 at "Solid State Communications"
DOI: 10.1016/j.ssc.2017.01.026
Abstract: Single crystals of Tb0.5Sr0.5MnO3 were grown in an optical float zone furnace and their magnetic and thermodynamic properties were studied. Temperature dependent DC magnetization measurements at different fields show strong irreversibility below the magnetic anomaly…
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Keywords:
thermodynamic properties;
temperature;
relaxation dynamics;
5sr0 5mno3 ... See more keywords
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Published in 2018 at "Inorganic chemistry frontiers"
DOI: 10.1039/c7qi00687j
Abstract: Controllable growth of perovskite structure oxide crystals with well-defined facets is challenging, especially in the mixed-valence state manganites with both rare-earth and alkaline-earth cations in their A-site. In this paper, we systematically studied the effects…
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Keywords:
oxygen reduction;
shape;
5sr0 5mno3;
la0 5sr0 ... See more keywords
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Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4978634
Abstract: Pr0.5Sr0.5MnO3 (PSMO) thin film is epitaxially grown on (001)-oriented LaAlO3 single-crystal substrate using pulsed laser deposition (PLD). It is found that the as-grown PSMO film shows compressive strain in plane and tensile strain out of…
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Keywords:
pr0 5sr0;
effect post;
temperature;
thin film ... See more keywords