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   Articles with "5zr0 5o2" as a keyword



Leveraging Crystallization Pathway to Control Structure in Hf0.5Zr0.5O2 Nanoparticles

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recommendations! Published in 2024 at "Advanced Engineering Materials"

DOI: 10.1002/adem.202301755

Abstract: Hf0.5Zr0.5O2‐based materials have garnered significant attention for applications requiring ferroelectricity at the nanoscale. This behavior arises due to the stabilization of metastable phases at room temperature. However, the synthesis of phase pure Hf0.5Zr0.5O2 remains a… read more here.

Keywords: 5o2 nanoparticles; structure; crystallization pathway; 5zr0 5o2 ... See more keywords

Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

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recommendations! Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202109889

Abstract: Hafnia‐based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal–oxide–semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive… read more here.

Keywords: 5zr0 5o2; large scale; scale hf0; robust ferroelectricity ... See more keywords

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors

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recommendations! Published in 2019 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.201901180

Abstract: After the discovery of ferroelectricity in HfO2, many dopants have been incorporated into the material to improve the ferroelectric properties. The binary mixture of HfO2 and ZrO2, HfxZrx−1O2, showed the widest process window in terms… read more here.

Keywords: bulk depolarization; 5zr0 5o2; hf0 5zr0; fields major ... See more keywords

Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories

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recommendations! Published in 2024 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202400367

Abstract: Since the first report of ferroelectric HfO2 in 2011, researchers are making rapid progress in the understanding of both material properties and applications. Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage… read more here.

Keywords: films memories; preparation; 5o2 ferroelectric; ferroelectric films ... See more keywords

Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

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recommendations! Published in 2025 at "Advanced Science"

DOI: 10.1002/advs.202509384

Abstract: HfO2‐based ferroelectric devices have garnered lots of attention in embedded memory due to its exceptional complementary metal oxide semiconductor (CMOS) compatibility as well as sub‐10 nm scalability. Nevertheless, challenges such as double remanent polarization (2Pr)… read more here.

Keywords: hzo; zirconium rich; back end; memory ... See more keywords

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue

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recommendations! Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202300877

Abstract: As a promising candidate for nonvolatile memory devices, the hafnia‐based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an… read more here.

Keywords: fatigue; oxygen vacancy; 5zr0 5o2; hf0 5zr0 ... See more keywords
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Preparation of Ce0.5Zr0.5O2–Al2O3 with high-temperature sintering resistance and its supported Pd-only three-way catalyst

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recommendations! Published in 2018 at "Journal of Materials Science"

DOI: 10.1007/s10853-018-3048-z

Abstract: In this study, three Ce0.5Zr0.5O2–Al2O3 composites were synthesized using co-precipitation method with different precursor mixing ways. Differences in structural, textural, reduction properties and catalytic performance, in combination with the aging behaviors of the supports and… read more here.

Keywords: ce0 5zr0; preparation ce0; 5o2 al2o3; resistance ... See more keywords
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Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer

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recommendations! Published in 2020 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2020.148737

Abstract: Abstract Due to the full compatibility with modern complementary-metal-oxide-semiconductor (CMOS) technology and scalable capability, HfO2-based ferroelectric films have been considered as the most potential materials in micro-nano non-volatile memories. However, despite great achievements, the existence… read more here.

Keywords: layer; ferroelectricity; hf0 5zr0; ferroelectricity reliability ... See more keywords
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Synthesis of flowerlike ceria–zirconia solid solution for promoting dry reforming of methane

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recommendations! Published in 2021 at "International Journal of Hydrogen Energy"

DOI: 10.1016/j.ijhydene.2021.09.025

Abstract: Abstract Using a newly developed two-step hydrothermal process, flowerlike Ce0.5Zr0.5O2 with an oxygen storage capacity (OSC) of 536 μmol O2 g−1, almost twice as high as that of pure flowerlike CeO2 (284 μmol O2 g−1), can be… read more here.

Keywords: ce0 5zr0; reforming methane; dry reforming; flowerlike ... See more keywords

Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si

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recommendations! Published in 2017 at "Microelectronic Engineering"

DOI: 10.1016/j.mee.2017.05.028

Abstract: In this work, we report on the electron transport properties of ultrathin (~2.5nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (ALD) technique directly on the highly doped Si substrate. On the… read more here.

Keywords: electron transport; transport; hzo; ultrathin ferroelectric ... See more keywords

Direct observation of reversible oxygen migration and phase transitions in ferroelectric Hf0.5Zr0.5O2 thin-film devices

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recommendations! Published in 2021 at "Microscopy and Microanalysis"

DOI: 10.1017/s1431927621003640

Abstract: Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen… read more here.

Keywords: microscopy; reversible oxygen; hf0 5zr0; 5zr0 5o2 ... See more keywords