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2
Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202109889
Abstract: Hafnia‐based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal–oxide–semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive…
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Keywords:
5zr0 5o2;
large scale;
scale hf0;
robust ferroelectricity ... See more keywords
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Published in 2019 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.201901180
Abstract: After the discovery of ferroelectricity in HfO2, many dopants have been incorporated into the material to improve the ferroelectric properties. The binary mixture of HfO2 and ZrO2, HfxZrx−1O2, showed the widest process window in terms…
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Keywords:
bulk depolarization;
5zr0 5o2;
hf0 5zr0;
fields major ... See more keywords
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2
Published in 2018 at "Journal of Materials Science"
DOI: 10.1007/s10853-018-3048-z
Abstract: In this study, three Ce0.5Zr0.5O2–Al2O3 composites were synthesized using co-precipitation method with different precursor mixing ways. Differences in structural, textural, reduction properties and catalytic performance, in combination with the aging behaviors of the supports and…
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Keywords:
ce0 5zr0;
preparation ce0;
5o2 al2o3;
resistance ... See more keywords
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1
Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.148737
Abstract: Abstract Due to the full compatibility with modern complementary-metal-oxide-semiconductor (CMOS) technology and scalable capability, HfO2-based ferroelectric films have been considered as the most potential materials in micro-nano non-volatile memories. However, despite great achievements, the existence…
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Keywords:
layer;
ferroelectricity;
hf0 5zr0;
ferroelectricity reliability ... See more keywords
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Published in 2021 at "International Journal of Hydrogen Energy"
DOI: 10.1016/j.ijhydene.2021.09.025
Abstract: Abstract Using a newly developed two-step hydrothermal process, flowerlike Ce0.5Zr0.5O2 with an oxygen storage capacity (OSC) of 536 μmol O2 g−1, almost twice as high as that of pure flowerlike CeO2 (284 μmol O2 g−1), can be…
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Keywords:
ce0 5zr0;
reforming methane;
dry reforming;
flowerlike ... See more keywords
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1
Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.028
Abstract: In this work, we report on the electron transport properties of ultrathin (~2.5nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (ALD) technique directly on the highly doped Si substrate. On the…
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Keywords:
electron transport;
transport;
hzo;
ultrathin ferroelectric ... See more keywords
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Published in 2021 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927621003640
Abstract: Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen…
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Keywords:
microscopy;
reversible oxygen;
hf0 5zr0;
5zr0 5o2 ... See more keywords
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2
Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c01066
Abstract: HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is…
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Keywords:
mechanical polarization;
5zr0 5o2;
hf0 5zr0;
film ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c08414
Abstract: The discovery of ferroelectricity and advances in creating polar structures in atomic-layered hafnia-zirconia (HfxZr1-xO2) films spur the exploration of using the material for novel integrated nanoelectromechanical systems (NEMS). Despite its popularity, the approach to achieving…
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Keywords:
5zr0 5o2;
quality factors;
hf0 5zr0;
nanoelectromechanical resonators ... See more keywords
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1
Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b15110
Abstract: Hf0.5Zr0.5O2 thin films are one of the most appealing HfO2-based ferroelectric thin films, which have been researched extensively for their applications in ferroelectric memory devices. In this work, a 1 mol % La-doped Hf0.5Zr0.5O2 thin…
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Keywords:
thin films;
hf0 5zr0;
film;
5o2 thin ... See more keywords
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1
Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c01266
Abstract: The antioxidant therapy to preserve residual hearing is relatively recent, and the search for effective antioxidants is still ongoing. Though nanoceria has shown promising radical-scavenging capability, improving its antioxidant ability and the dispersion stability of…
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Keywords:
peg coated;
5zr0 5o2;
coated ce0;
peg ... See more keywords