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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5001979
Abstract: An Al0.6Ga0.4N/Al0.5Ga0.5N metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector was developed. It possesses both high photosensitivity and high rejection ratios in comparison to photomultiplier tubes (PMTs). The photodetector was designed to have a two-dimensional electron gas layer…
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Keywords:
al0 6ga0;
6ga0 al0;
photodetector;
al0 ... See more keywords