Fabrication and dielectric properties of Ba0.6Sr0.4TiO3 / acrylonitrile–butadiene–styrene resin composites
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-6626-y
Abstract: Ba0.6Sr0.4TiO3 (BST)/acrylonitrile–butadiene–styrene (ABS) composites were prepared via solution casting method. Effects of volume fraction of BST on microstructure and dielectric properties of composites were studied. Dielectric constants were simulated by Lichtenecker, Maxwell, Landzu–Lifishitz, and Yamada… read more here.
Keywords: acrylonitrile butadiene; 6sr0 4tio3; butadiene styrene; dielectric properties ... See more keywords
Structural Optimization for Wideband Flexoelectric Energy Harvester Using Bulk Paraelectric Ba0.6Sr0.4TiO3
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5772-6
Abstract: Flexoelectricity is a phenomenon which allows all crystalline dielectric materials to exhibit strain-induced polarization. With recent articles reporting giant flexoelectric coupling coefficients for various ferroelectric materials, this field must be duly investigated for its application… read more here.
Keywords: power output; 6sr0 4tio3; energy; power ... See more keywords
Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer
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DOI: 10.1007/s11664-018-6539-4
Abstract: The interface properties of a Au/n-GaN Schottky junction (SJ) were modified by placing a high-k barium strontium titanate (Ba0.6Sr0.4TiO3) insulating layer between the Au and n-GaN semiconductor. The surface morphology, chemical composition, and electrical properties… read more here.
Keywords: mis junction; 6sr0 4tio3; insulating layer; ba0 6sr0 ... See more keywords
Electrical and electroluminescence properties of Ca0.6Sr0.4TiO3:Pr thin film: Anomalous current and luminance relaxation
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2018.04.023
Abstract: Abstract An electroluminescent device composed of In2O3:Sn electrode, Ca0.6Sr0.4TiO3:Pr red phosphor with the emission peak at 613 nm, and SnO2:Sb electrode thin films is prepared using a sol-gel and firing method. The electrical and electroluminescence properties… read more here.
Keywords: ca0 6sr0; 6sr0 4tio3; electrical electroluminescence; electroluminescence ... See more keywords
Effects of doping by aluminum or lanthanum on the electrical and electroluminescence properties of Ca0.6Sr0.4TiO3:Pr thin films
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DOI: 10.1016/j.jlumin.2018.11.037
Abstract: Abstract Thin-film electroluminescent devices containing Ca0.6Sr0.4TiO3:Pr, Al-doped Ca0.6Sr0.4TiO3:Pr, or La-doped Ca0.6Sr0.4TiO3:Pr phosphors were prepared by a conventional sol–gel and firing method. Doping by Al improved the performance of the device markedly, in that its current-starting… read more here.
Keywords: doped ca0; thin films; 6sr0 4tio3; effects doping ... See more keywords
Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2637365
Abstract: In this paper, we present a distinguished hysteresis behavior by a few nanometers inlaid Zr–Hf–O (ZHO) layer between the Ba0.6Sr0.4TiO3(BST) film and the metal Pt electrode. The capacitance–voltage curve shows an insignificant change in the… read more here.
Keywords: nonvolatile memory; novel nonvolatile; 6sr0 4tio3; layer ... See more keywords