720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth
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DOI: 10.1063/5.0299842
Abstract: This work demonstrates, for the first time, avalanche breakdown capability in quasi-vertical gallium nitride (GaN) on silicon (Si) substrates employing localized epitaxial growth. On industry-standard 200 mm wafers, we integrated an 8 μm thick GaN drift layer… read more here.
Keywords: capability; 720 quasi; gan silicon; quasi vertical ... See more keywords