Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
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DOI: 10.1063/5.0066263
Abstract: A record-long room-temperature photoluminescence (PL) lifetime ( τPLRT) of approximately 70 ps was obtained for the sub-bandgap 3.7 eV emission band of a 300-nm-thick c-plane Al0.83In0.17N epilayer for the use in cladding layers of an edge… read more here.
Keywords: metalorganic vapor; al0 83in0; vapor phase; 83in0 17n ... See more keywords