Influence of Sb2 soaking on strained InAs0.8Sb0.2/Al0.2Ga0.8Sb multiple quantum well interfaces
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DOI: 10.1063/6.0000977
Abstract: InAsSb/AlGaSb systems have potential in mid-wavelength infrared detection and laser fields. Thus, their heteroepitaxial crystal quality and heterointerface are of great importance. Herein, the quantum well structure based on InAs0.8Sb0.2/Al0.2Ga0.8Sb was grown by interruption with… read more here.
Keywords: al0 2ga0; 8sb0 al0; microscopy; inas0 8sb0 ... See more keywords