Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400780
Abstract: A steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) monolithically integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) device is presented, which allows switching below the Boltzmann limit of 60 mV dec−1 at room temperature (25 °C).… read more here.
Keywords: 2o2 atomic; slope igzo; monolithically integrated; 8zr0 2o2 ... See more keywords
One-pot microwave-assisted synthesis of Cu-Ce0.8Zr0.2O2 with flower-like morphology: Enhanced stability for ethanol dry reforming
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Powder Technology"
DOI: 10.1016/j.apt.2020.07.032
Abstract: Abstract A CuCeZr composite oxide (Cu-Ce0.8Zr0.2O2) was prepared via microwave-assisted co-precipitation method and employed in syngas production from dry reforming of renewable ethanol. Its physicochemical features were deeply investigated by a series of characterization technique… read more here.
Keywords: dry reforming; 8zr0 2o2; microwave assisted; flower like ... See more keywords
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2931430
Abstract: The ability to partially switch an FeFET could enable their use as an embedded low-voltage memory and as analog weight storage in artificial neural networks (ANNs). We report on memory characterization of FeFETs gated with… read more here.
Keywords: hf0 8zr0; low voltage; 8zr0 2o2; memory ... See more keywords