Abrupt dependence of ultrafast extrinsic photoconductivity on Er fraction in GaAs:Er
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DOI: 10.1063/1.4991876
Abstract: We present a study of room-temperature, ultrafast photoconductivity associated with a strong, sub-bandgap, resonant absorption around λ = 1550 nm in three MBE-grown GaAs epitaxial layers heavily doped with Er at concentrations of ≈2.9 × 1018 (control sample), 4.4 × 1020, and… read more here.
Keywords: extrinsic photoconductivity; ultrafast extrinsic; dependence ultrafast; photoconductivity ... See more keywords