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Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.7b03263
Abstract: Interfacing light-sensitive semiconductors with graphene can afford high-gain phototransistors by the multiplication effect of carriers in the semiconductor layer. So far, most devices consist of one semiconductor light-absorbing layer, where the lack of internal built-in…
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Keywords:
graphene phototransistors;
absorbing layer;
light absorbing;
performance graphene ... See more keywords
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Published in 2019 at "High Temperature"
DOI: 10.1134/s0018151x19060038
Abstract: It has been shown experimentally that an electron-hole plasma forms in the surface layer at a depth of ~30 nm, followed by a transition to the metallic state, when GaAs is exposed to femtosecond laser…
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Keywords:
laser;
transition;
laser pulses;
absorbing layer ... See more keywords