Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures.
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DOI: 10.1088/1361-6528/aa8504
Abstract: In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band… read more here.
Keywords: absorption; absorption doped; band; gan aln ... See more keywords