Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials via Ga3+‐Doping for over 12% Efficient Solar Cells
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DOI: 10.1002/adfm.202010325
Abstract: The efficiency of earth‐abundant Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is considerably lower than the Shockley–Queisser limit. One of the main reasons for this is the presence of deleterious cation disordering caused by SnZn antisite and 2CuZn+SnZn… read more here.
Keywords: earth abundant; defect engineering; abundant cu2znsn; ga3 ... See more keywords