Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
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DOI: 10.1557/mrs.2018.92
Abstract: Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in… read more here.
Keywords: hafnium oxide; hafnia; ferroelectric random; field ... See more keywords