In Memory Energy Application for Resistive Random Access Memory
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100297
Abstract: This work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as… read more here.
Keywords: energy; access memory; random access; memory ... See more keywords
Effects of moisture and electrode material on AlN-based resistive random access memory
Sign Up to like & getrecommendations! Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2019.05.157
Abstract: Abstract Resistive random access memory (RRAM) has been developed as a next-generation nonvolatile memory because of its fast operation speed, low power consumption, high density, and simple structure. Non-oxide materials such as AlN-based RRAM also… read more here.
Keywords: access memory; random access; aln based; memory ... See more keywords
Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems
Sign Up to like & getrecommendations! Published in 2020 at "Ceramics International"
DOI: 10.1016/j.ceramint.2020.05.191
Abstract: Abstract The resistive switching (RS) behavior of a gallium oxide (Ga2O3) thin film for use in resistive random access memory (RRAM) was investigated. Ta/Ga2O3/Pt memory devices exhibited favorable RS behavior, such as a small distribution… read more here.
Keywords: resistive random; random access; access memory; gallium oxide ... See more keywords
Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.06.178
Abstract: Abstract Bilayer of NiO x /TiO 2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS)… read more here.
Keywords: resistive random; resistive switching; random access; enhanced resistive ... See more keywords
Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling
Sign Up to like & getrecommendations! Published in 2019 at "Vacuum"
DOI: 10.1016/j.vacuum.2018.12.020
Abstract: Abstract In this study, a fully Si-compatible resistive-switching random-access memory (ReRAM) employing GeOx as the switching layer is fabricated, analyzed, and characterized. I–V curves and endurance characteristics have been obtained from the measurement of fabricated… read more here.
Keywords: random access; access memory; switching random; resistive switching ... See more keywords
Microscopic mechanism of carbon-dopant manipulating device performance in CGeSbTe-based phase change random access memory.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c02507
Abstract: Carbon (C) doped Ge2Sb2Te5 material is a potential candidate in phase change random access memory, ascribing to its superb thermal stability and ultra-high cycle endurance. Unfortunately, the role and distribution evolution of C-dopant is still… read more here.
Keywords: phase; phase change; random access; access memory ... See more keywords
On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c02913
Abstract: An artificial synapse based on oxygen-ion-driven electrochemical random-access memory (O-ECRAM) devices is a promising candidate for building neural networks embodied in neuromorphic hardware. However, achieving commercial-level learning accuracy in O-ECRAM synapses, analog conductance tuning at… read more here.
Keywords: atomically thin; heater; random access; electrochemical random ... See more keywords
Purely antiferromagnetic magnetoelectric random access memory
Sign Up to like & getrecommendations! Published in 2017 at "Nature Communications"
DOI: 10.1038/ncomms13985
Abstract: Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of… read more here.
Keywords: access memory; random access; purely antiferromagnetic; memory ... See more keywords
Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
Sign Up to like & getrecommendations! Published in 2018 at "Scientific Reports"
DOI: 10.1038/s41598-018-25215-z
Abstract: Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the… read more here.
Keywords: phase change; sb2te alloy; random access; speed ... See more keywords
Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array.
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale"
DOI: 10.1039/c7nr00934h
Abstract: Resistive random access memory (RRAM) based reconfigurable logic provides a temporal programmable dimension to realize Boolean logic functions and is regarded as a promising route to build non-von Neumann computing architecture. In this work, a… read more here.
Keywords: resistive random; array; random access; access memory ... See more keywords
Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
Sign Up to like & getrecommendations! Published in 2018 at "RSC Advances"
DOI: 10.1039/c8ra03181a
Abstract: We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics… read more here.
Keywords: resistive random; random access; zn2tio4 resistive; access memory ... See more keywords