Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics
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DOI: 10.1007/s11664-020-08261-0
Abstract: The increase of bias-dependent source access resistance, rs, with high gate bias is attributed to a sharp drop in transconductance, gm, and current gain cut-off frequency, fT, of high-electron-mobility transistors (HEMTs). Consequently, source and drain… read more here.
Keywords: ga2o3; source; effect; resistance ... See more keywords