Accurate and Effective Nonlinear Behavioral Modeling of a 10-W GaN HEMT Based on LSTM Neural Networks
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DOI: 10.1109/access.2023.3258691
Abstract: This paper presents a novel nonlinear behavioral modeling methodology based on long-short-term memory (LSTM) networks for gallium nitride (GaN) high-electron-mobility transistors (HEMTs). There are both theoretical foundations and practical implementations of the modeling procedure provided… read more here.
Keywords: nonlinear behavioral; effective nonlinear; accurate effective; gan hemt ... See more keywords